graphene films can be obtained by seamless stitching on Cu(111), for this
purpose, Cu(111) films on large area are usually desired. One of the methods to
obtain such copper films is the contact-free annealing (CFA) method, during
which copper films are not in contact with sample holders. Once the strain within
the film is eliminated, grains can grow in a much faster way with the (111)
facet as reported in literature. In this 3-week project, mainly a specifically designed
quartz holder will be used to test whether such CFA method can be used to grow large
Cu(111) grains, and the as-obtained copper films will be used for graphene
growth by chemical vapor deposition (CVD) method.
during the project you will
copper foils by electropolishing to smoothen the metal surface
※ Anneal the copper foil by CFA method and
the normal “contact annealing” method
※ Optimize the annealing process to obtain
large copper grains
※ Grow graphene films by CVD method on copper
※ Graphene transfer by etching method
※ Characterize by common method, such as scanning electron microscopy
(SEM), Raman and X-ray photoelectron spectroscopy (XPS).
More info can be found in the PDF attached.