Projekt

Doping of GaAs nanowires for solar cell application

Udbyder

Vejleder

Sted

København og omegn

Motivation

III-V materials are perfect for photovoltaics applications due to its direct band gap, high absorption, and high carrier mobility. However, III-V materials such as GaAs, InP and other ternary compounds, which are widely used in solar cells, are quite expensive. Meanwhile, silicon solar cells are commercially available and have high enough PCE to compete with III-V cells. Silicon photovoltaics are the most developed at the moment and the theoretical efficiency limit for silicon was already almost reached. For further development of silicon photovoltaics and further improvement of effectivity, it’s obvious to think about a tandem approach and combine silicon with other materials, for instance with III-V. In order to implement tandem solar cell design we growth GaAs nanowires on Si. It’s important to study the epitaxial growth of GaAs nanowires on silicon, its optical and electrical properties, surface passivation of nanowires and contact formation. 

Project

In this project, you will be mainly focused on GaAs nanowires growth and in-situ doping by Metal Organic Vapour Phase Epitaxy (MOVPE). High concentration of dopant in nanowires is required to create a high-efficiency tandem solar cell. CBrCl3 is a precursor that allows achieving a high concentration and sharp profile of p-type carbon doping in GaAs thin films. In case of nanowire growth, the in-situ CBrCl3 doping may significantly influence the growth process since Br and Cl byproducts react with Ga. The goal of the project is to investigate this influence of doping and control the doping level in GaAs nanowires. 

 Your main tasks will be

  • GaAs nanowire epitaxial growth by MOVPE
  • Scanning Electron Microscopy characterization of the grown nanowires
  • Optical and electrical measurements of the doped nanowires

 

Forudsætninger

Basic knowledge about fabrication and characterization techniques

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Kontakt

Virksomhed/organisation

DTU Fotonik

Navn

Elizaveta Lebedkina

Stilling

Ph.d.-studerende

Mail

lile@fotonik.dtu.dk

Vejleder-info

Bachelor i Fysik og Nanoteknologi

Vejleder

Elizaveta Lebedkina

Medvejledere

Elizaveta Semenova, Stela Canulescu

ECTS-point

15 - 35

Type

Bachelorprojekt, Kandidatspeciale

Kandidatuddannelsen i Fysik og Nanoteknologi

Vejleder

Elizaveta Lebedkina

Medvejledere

Elizaveta Semenova, Stela Canulescu

ECTS-point

15 - 35

Type

Bachelorprojekt, Kandidatspeciale

OM DTU

DTU er et teknisk eliteuniversitet med international rækkevidde og standard. Vores mission er at udvikle og nyttiggøre naturvidenskab og teknisk videnskab til gavn for samfundet. 10.000 studerende uddanner sig her til fremtiden, og 5.700 medarbejdere har hver dag fokus på uddannelse, forskning, myndighedsrådgivning og innovation, som bidrager til øget vækst og velfærd.

Find os her

Anker Engelunds Vej 1
Bygning 101A
2800 Kgs. Lyngby


45 25 25 25

dtu@dtu.dk

CVR-nr. 30 06 09 46

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