The purpose of this project is to optimize previous designs
of microfabricated electro devices for III-V nanowire growth using an in situ transmission electron
Nanotechnology has a tremendous influence on the fourth
industrial revolution. The development of small transistors, smart sensors and
better energy storage all includes nanostructures and, especially, nanowires
are of huge interest as they have revealed unique properties compared to the
Silicon devices have had a huge impact on the development
through the second half of the 20th century, but other materials
have gained increasing interest due to better electrical and optical
This project will take part in a greater study of electro
devices with alternatives to silicon nanowires – So-called III-V nanowires –
combining Al, Ga and In with N, P, As and Sb.
The student will take part in some of the following
activities regarding the study:
Developing their own and optimize existing
designs combined with simulations and theoretical predictions.
Microfabrication of the devices in the DTU
Characterization of electro devices.
Nanowire growth and characterization on a high
end transmission electron microscopy at Lund University.
Competences after the
project (This will depend on the student’s ambitions and interests):
Hands on experience in the cleanroom facility at
Programming experience for instrumental setups
and data analysis with COMSOL, Python, MATLAB, LabVIEW etc.
Experience with various instruments including scanning
electron microscopy, transmission electron microscopy, atomic force microscopy
and Raman scattering.
Theoretical knowledge and experience within
microfabrication and nanostructures.
I samarbejde medLund Universitet
Knowledge in solid state physics or/and cleanroom processing would be an advantage