Project

Doping of GaAs nanowires for solar cell application

Publisher

Supervisor

Location

Greater Copenhagen area

Motivation

III-V materials are perfect for photovoltaics applications due to its direct band gap, high absorption, and high carrier mobility. However, III-V materials such as GaAs, InP and other ternary compounds, which are widely used in solar cells, are quite expensive. Meanwhile, silicon solar cells are commercially available and have high enough PCE to compete with III-V cells. Silicon photovoltaics are the most developed at the moment and the theoretical efficiency limit for silicon was already almost reached. For further development of silicon photovoltaics and further improvement of effectivity, it’s obvious to think about a tandem approach and combine silicon with other materials, for instance with III-V. In order to implement tandem solar cell design we growth GaAs nanowires on Si. It’s important to study the epitaxial growth of GaAs nanowires on silicon, its optical and electrical properties, surface passivation of nanowires and contact formation. 

Project

In this project, you will be mainly focused on GaAs nanowires growth and in-situ doping by Metal Organic Vapour Phase Epitaxy (MOVPE). High concentration of dopant in nanowires is required to create a high-efficiency tandem solar cell. CBrCl3 is a precursor that allows achieving a high concentration and sharp profile of p-type carbon doping in GaAs thin films. In case of nanowire growth, the in-situ CBrCl3 doping may significantly influence the growth process since Br and Cl byproducts react with Ga. The goal of the project is to investigate this influence of doping and control the doping level in GaAs nanowires. 

 Your main tasks will be

  • GaAs nanowire epitaxial growth by MOVPE
  • Scanning Electron Microscopy characterization of the grown nanowires
  • Optical and electrical measurements of the doped nanowires

 

Requirements

Basic knowledge about fabrication and characterization techniques

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Contact

Company / Organization

DTU Fotonik

Name

Elizaveta Lebedkina

Position

Ph.d.-studerende

Mail

lile@fotonik.dtu.dk

Supervisor info

BSc in Physics and Nanotechnology

Supervisor

Elizaveta Lebedkina

Co-supervisors

Elizaveta Semenova, Stela Canulescu

ECTS credits

15 - 35

Type

BSc project, MSc thesis

MSc in Physics and Nanotechnology

Supervisor

Elizaveta Lebedkina

Co-supervisors

Elizaveta Semenova, Stela Canulescu

ECTS credits

15 - 35

Type

BSc project, MSc thesis

Technical University of Denmark

For almost two centuries DTU, Technical University of Denmark, has been dedicated to fulfilling the vision of H.C. Ørsted – the father of electromagnetism – who founded the university in 1829 to develop and create value using the natural sciences and the technical sciences to benefit society.


Today, DTU is ranked as one of the foremost technical universities in Europe, continues to set new records in the number of publications, and persistently increases and develops our partnerships with industry, and assignments accomplished by DTU’s public sector consultancy.

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